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| HFP830 June 2005 BVDSS = 500 V HFP830 500V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 18 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.2 (Typ.) @VGS=10V 100% Avalanche Tested RDS(on) typ = 1.2 ID = 4.5 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC=25 unless otherwise specified Parameter Value 500 Units V A A A V mJ A mJ V/ns W W/ - Continuous (TC = 25) - Continuous (TC = 100) - Pulsed (Note 1) 4.5 2.9 18 30 (Note 2) (Note 1) (Note 1) (Note 3) 270 4.5 7.3 5.5 73 0.58 -55 to +150 300 Power Dissipation (TC = 25) - Derate above 25 Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Resistance Characteristics Symbol RJC RCS RJA Junction-to-Case Case-to-Sink Junction-to-Ambient Parameter Typ. -0.5 -Max. 1.71 -62.5 /W Units SEMIHOW REV.A0,June 2005 HFP830 Electrical Characteristics TC=25 C Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 VGS = 10 V, ID = 2.25 A 2.5 --1.2 4.5 1.5 V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ID = 250 , Referenced to25 VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125 VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 500 ------0.54 ------1 10 100 -100 V V/ BVDSS Breakdown Voltage Temperature Coefficient /TJ IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---750 80 11 980 105 14 Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 4,5) VDS = 250 V, ID = 4.5 A, RG = 25 -------- 15 40 60 40 18 3.9 7.5 30 80 120 80 23 --- nC nC nC VDS = 400V, ID = 4.5 A, VGS = 10 V (Note 4,5) Source-Drain Diode Maximum Ratings and Characteristics IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 4.5 A, VGS = 0 V IS = 4.5 A, VGS = 0 V diF/dt = 100 A/s (Note 4) --------300 2.5 4.5 18 1.4 --A V C Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=24mH, IAS=4.5A, VDD=50V, RG=25, Starting TJ =25C 3. ISD4.5A, di/dt300A/s, VDDBVDSS , Starting TJ =25 C 4. Pulse Test : Pulse Width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature SEMIHOW REV.A0,June 2005 HFP830 Typical Characteristics 101 ID, Drain Current [A] ID, Drain Current [A] V 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V Bottem 5.0V Top: 101 100 150 100 25 -55 Note : 1. VDS=40V 2. 250 Pulse Test 10-1 10-1 100 Note : 1. 250 Pulse Test 2. TC=25 10-1 2 101 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics 6 101 RDS(ON)[], Drain-Source On-Resistance 4 VGS=10V 3 VGS=20V 2 IDR, Reverse Drain Current [A] 100 150 25 Note : 1. VGS=0V 2. 250 Pulse Test 1 Note : TJ=25 0 0 3 6 9 12 15 10-1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain Voltage [V] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 1400 1200 1000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 VDS = 100V VGS, Gate-Source Voltage [V] 10 VDS = 250V VDS = 400V Capacitances [pF] Ciss 8 800 600 400 6 Coss * Note ; 1. VGS = 0 V 2. f = 1 MHz 4 Crss 200 0 10-1 2 Note : ID = 4.5A 10 0 10 1 0 0 4 8 12 16 20 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics SEMIHOW REV.A0,June 2005 HFP830 Typical Characteristics (continued) 1.2 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 * Note : 1. VGS = 10 V 2. ID = 2.25 A 0.9 Note : 1. VGS=0V 2. ID=250 0.5 0.8 -100 -50 0 50 100 150 200 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 7. Breakdown Voltage Variation vs Temperature 102 5 Operation in This Area is Limited by R DS(on) Figure 8. On-Resistance Variation vs Temperature 4 ID, Drain Current [A] 100 1 ms 10 ms 100 ms DC ID, Drain Current [A] 101 100 s 3 2 10-1 * Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse 1 10-2 0 10 101 102 103 0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [ ] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 100 D=0.5 0.2 0.1 * Notes : 1. ZJC(t) = 1.71 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t) Z JC(t), Thermal Response 10 -1 0.05 0.02 0.01 single pulse PDM t1 t2 100 101 10-2 10-5 10-4 10-3 10-2 10-1 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve SEMIHOW REV.A0,June 2005 HFP830 Fig 12. Gate Charge Test Circuit & Waveform 50K 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDD ( 0.5 rated VDS ) VDS 90% 10V DUT Vin 10% td(on) t on tr td(off) t off tf Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L VDS VDD ID RG DUT BVDSS IAS BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD ID (t) VDS (t) tp 10V Time SEMIHOW REV.A0,June 2005 HFP830 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG Same Type as DUT VDD VGS * dv/dt controlled by RG * IS controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop SEMIHOW REV.A0,June 2005 HFP830 Package Dimension TO-220 (A) 9.900.20 3 0 .6 0. 20 4.500.20 1.300.20 15.700.20 2.800.20 9.190.20 6.500.20 13.080.20 0.800.20 2.54typ 2.54typ 0.500.20 3.020.20 1.270.20 1.520.20 2.400.20 SEMIHOW REV.A0,June 2005 HFP830 TO-220 (B) 0.20 . 3 84 0 0 .2 4.570.20 1.270.20 15.440.20 2.740.20 9.140.20 6.300.20 2.670.20 13.280.20 1.270.20 2.670.20 0.810.20 2.54typ 2.54typ 0.400.20 SEMIHOW REV.A0,June 2005 |
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